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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Interfacial-layer-driven dielectric degradation and breakdown of HfSiON/SiON gate dielectric nMOSFETs
SCIE
SCOPUS
IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 10, page. 1319 - 1321, 2011-10
Choi, DY
;
Lee, KT
;
Baek, CK
;
Sohn, CW
;
Sagong, HC
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Jung, EY
;
Lee, JS
;
Jeong, YH
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HfSiON
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high-k dielectric
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interfacial layer (IL)
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positive bias temperature instabi...
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reliability
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SiON
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stress-induced leakage current (S...
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time-dependent dielectric breakdo...
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