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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function Technique
SCIE
SCOPUS
IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 9, no. 2, page. 212 - 217, 2010-03
Baek, RH
;
BAEK, CHANG KI
;
Jung, SW
;
Yeoh, YY
;
Kim, DW
;
LEE, JEONG SOO
;
Kim, D
;
JEONG, YOON HA
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Gate-all-around (GAA)
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MOSFET
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nanowire
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R-sd
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series resistance
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twin silicon nanowire
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Y-function
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2010
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scopus
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