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Department of Creative IT Engineering (창의IT융합공학과)
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Article
A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO2 Layer
SCIE
SCOPUS
IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 10, no. 4, page. 699 - 705, 2011-07
Park, S
;
Baek, CK
;
Park, HH
;
Choi, S
;
Park, YJ
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3-D device simulation
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drift-diffusion (DD) and density-...
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ELECTRON
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local mobility fluctuation
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OXIDE
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RANDOM TELEGRAPH NOISE
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random telegraph signal (RTS)
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SUBMICROMETER MOSFETS
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