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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications
SCIE
SCOPUS
IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 9, page. 1234 - 1236, 2012-09
Sohn, CW
;
Kang, CY
;
Baek, RH
;
Choi, DY
;
Sagong, HC
;
Jeong, EY
;
BAEK, CHANG KI
;
LEE, JEONG SOO
;
Lee, JC
;
Jeong, YH
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fin height
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fin spacing
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fin-based multigate field-effect ...
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parasitic capacitance
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radio frequency (RF)
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series resistance
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2012
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