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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique
SCIE
SCOPUS
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 4, page. 4DN06-01 - 4DN06-05, 2010-04
Baek, RH
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BAEK, CHANG KI
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Jung, SW
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Yeoh, YY
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Kim, DW
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LEE, JEONG SOO
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Kim, DM
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JEONG, YOON HA
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