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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells
SCIE
SCOPUS
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 53, no. 12, page. 3012 - 3019, 2006-12
Kim, B
;
Kwon, WH
;
Baek, CK
;
Son, Y
;
Park, CK
;
Kim, K
;
Kim, DM
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edge profile effect
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erase threshold voltage distribution
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Flash electrically erasable progr...
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FLUCTUATIONS
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MOSFETS
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SIMULATION
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2006
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