Internal Gain in Ge Nanowire Field-Effect Transistors with Axially Modulated Charge Trap Density
- Title
- Internal Gain in Ge Nanowire Field-Effect Transistors with Axially Modulated Charge Trap Density
- Authors
- 조문호
- Date Issued
- 2009-12-01
- Publisher
- Materials Research Society
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/46258
- Article Type
- Conference
- Citation
- 2009 Materials Research Society Fall Meeting, 2009-12-01
- Files in This Item:
- There are no files associated with this item.
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