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Breakdown Voltage Simulation of AlGaN/GaN High Electron Mobility Transistor with Al0.30Ga0.70N Back Barrier
- Title
- Breakdown Voltage Simulation of AlGaN/GaN High Electron Mobility Transistor with Al0.30Ga0.70N Back Barrier
- Authors
- 정윤하
- Date Issued
- 2009-07-09
- Publisher
- IEEK
- Article Type
- Conference
- Citation
- 2009 IEEK Summer Conference, page. 504, 2009-07-09
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg