Full metadata record
DC Field | Value | Language |
dc.contributor.author | 정윤하 | - |
dc.date.accessioned | 2018-05-23T15:02:47Z | - |
dc.date.available | 2018-05-23T15:02:47Z | - |
dc.date.created | 2010-05-10 | - |
dc.date.issued | 2009-06-02 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/46278 | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | 2009 IEEE Nanotechnology Materials and Devices Conference | - |
dc.relation.isPartOf | IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2009 | - |
dc.title | High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 2009 IEEE Nanotechnology Materials and Devices Conference | - |
dc.citation.conferenceDate | 2009-06-02 | - |
dc.citation.conferencePlace | US | - |
dc.citation.title | 2009 IEEE Nanotechnology Materials and Devices Conference | - |
dc.contributor.affiliatedAuthor | 정윤하 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
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