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dc.contributor.author정윤하-
dc.date.accessioned2018-05-23T15:02:47Z-
dc.date.available2018-05-23T15:02:47Z-
dc.date.created2010-05-10-
dc.date.issued2009-06-02-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46278-
dc.publisherIEEE-
dc.relation.isPartOf2009 IEEE Nanotechnology Materials and Devices Conference-
dc.relation.isPartOfIEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2009-
dc.titleHigh Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2009 IEEE Nanotechnology Materials and Devices Conference-
dc.citation.conferenceDate2009-06-02-
dc.citation.conferencePlaceUS-
dc.citation.title2009 IEEE Nanotechnology Materials and Devices Conference-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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