Conference
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정윤하 | - |
| dc.date.accessioned | 2018-05-23T15:03:04Z | - |
| dc.date.available | 2018-05-23T15:03:04Z | - |
| dc.date.created | 2010-05-10 | - |
| dc.date.issued | 2009-02-19 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/46284 | - |
| dc.publisher | Korean Conference on Semiconductors | - |
| dc.relation.isPartOf | 16th Korean Conference on Semiconductors | - |
| dc.relation.isPartOf | 16TH KOREAN CONFERENCE ON SEMICONDUCTORS | - |
| dc.title | 35 nm T-gate In0.52Al0.48As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with an Ultrahigh fmax of 610 GHz | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 16th Korean Conference on Semiconductors | - |
| dc.citation.conferenceDate | 2009-02-18 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.title | 16th Korean Conference on Semiconductors | - |
| dc.contributor.affiliatedAuthor | 정윤하 | - |
| dc.description.journalClass | 2 | - |
| dc.description.journalClass | 2 | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg