Conference
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
DC and Reliability Characteristics of 45 nm Node MOSFETs With Using HfSiON/TiN Gate Stacks
- Title
- DC and Reliability Characteristics of 45 nm Node MOSFETs With Using HfSiON/TiN Gate Stacks
- Authors
- 정윤하
- Date Issued
- 2009-02-18
- Publisher
- Korean Conference on Semiconductors
- Article Type
- Conference
- Citation
- 16th Korean Conference on Semiconductors, 2009-02-18
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg