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dc.contributor.author정윤하-
dc.date.accessioned2018-05-23T15:03:49Z-
dc.date.available2018-05-23T15:03:49Z-
dc.date.created2010-05-10-
dc.date.issued2007-12-06-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46301-
dc.publisherIEEE-
dc.relation.isPartOfin 38th IEEE Semiconductor Interface Specialists Conference-
dc.relation.isPartOf38TH IEEE SEMICONDUCTOR INTERFACE SPECIALISTS CONFERENCE-
dc.titlePBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k Dielectrics-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationin 38th IEEE Semiconductor Interface Specialists Conference, pp.8-
dc.citation.conferenceDate2007-12-06-
dc.citation.startPage8-
dc.citation.titlein 38th IEEE Semiconductor Interface Specialists Conference-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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