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Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions

Title
Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions
Authors
김종규K. X. ChenY. A. XiF. W. MontE. F. SchubertW. LiuX. LiJ. A. Smart
Date Issued
2007-06-20
Publisher
The 49th Electronic Materials Conference
URI
https://oasis.postech.ac.kr/handle/2014.oak/46748
Article Type
Conference
Citation
The 49th Electronic Materials Conference, 2007-06-20
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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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