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dc.contributor.author김종규-
dc.contributor.authorE. L. Waldron-
dc.contributor.authorY. –L. Lee-
dc.contributor.authorT. Gessmann-
dc.contributor.authorH. W. Jang-
dc.contributor.authorJ. –L. Lee-
dc.contributor.authorE. F. Schubert-
dc.date.accessioned2018-05-23T15:33:39Z-
dc.date.available2018-05-23T15:33:39Z-
dc.date.created2010-06-02-
dc.date.issued2004-03-15-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46793-
dc.publisherThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.relation.isPartOfThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.titleP-type conductivity in bulk AlxGa1–xN and AlxGa1–xN/AlyGa1–yN superlattices with average Al mole fraction  20% for LED confinement layers-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.citation.conferenceDate2004-03-15-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.contributor.affiliatedAuthor김종규-
dc.description.journalClass2-
dc.description.journalClass2-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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