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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정윤하 | - |
| dc.date.accessioned | 2018-05-23T15:55:21Z | - |
| dc.date.available | 2018-05-23T15:55:21Z | - |
| dc.date.created | 2010-10-26 | - |
| dc.date.issued | 2010-10-15 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/47214 | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | IEEE NMDC(Nanotechnology Materials and Devices conference) | - |
| dc.relation.isPartOf | PROCEEDING OF IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | - |
| dc.title | An equivalent circuit model for high-k/metal gate stack MOS capacitor with dynamic leakage | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | IEEE NMDC(Nanotechnology Materials and Devices conference), pp.291 - 294 | - |
| dc.citation.conferenceDate | 2010-10-12 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.endPage | 294 | - |
| dc.citation.startPage | 291 | - |
| dc.citation.title | IEEE NMDC(Nanotechnology Materials and Devices conference) | - |
| dc.contributor.affiliatedAuthor | 정윤하 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg