Conference
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이정수 | - |
| dc.date.accessioned | 2018-05-23T16:20:03Z | - |
| dc.date.available | 2018-05-23T16:20:03Z | - |
| dc.date.created | 2011-01-24 | - |
| dc.date.issued | 2010-05-06 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/47645 | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | IEEE International Reliability Physics Symposium | - |
| dc.relation.isPartOf | PROCEEDINGS OF 2010 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | - |
| dc.title | Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | IEEE International Reliability Physics Symposium | - |
| dc.citation.conferenceDate | 2010-05-02 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.title | IEEE International Reliability Physics Symposium | - |
| dc.contributor.affiliatedAuthor | 이정수 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 이정수LEE, JEONG SOO
- Dept of Electrical Enginrg