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dc.contributor.authorSong, Jeonghwan-
dc.contributor.authorPark, Jaehyuk-
dc.contributor.authorMoon, Kibong-
dc.contributor.authorWoo, Jiyong-
dc.contributor.authorLim, Seokjae-
dc.contributor.authorYoo, Jongmyung-
dc.contributor.authorLee, Dongwook-
dc.contributor.authorHwang, Hyunsang-
dc.date.accessioned2018-05-24T02:37:14Z-
dc.date.available2018-05-24T02:37:14Z-
dc.date.created2017-02-27-
dc.date.issued2016-12-07-
dc.identifier.issn2380-9248-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/48117-
dc.description.abstractAgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (I-on/I-off) of >10(8) with a low drain voltage (0.5 V) even after the 400 degrees C annealing process.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.isPartOf2016 IEEE International Electron Devices Meeting (2016 IEDM)-
dc.relation.isPartOf2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (2016 IEDM)-
dc.titleMonolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2016 IEEE International Electron Devices Meeting (2016 IEDM)-
dc.identifier.wosid000399108800153-
dc.citation.conferenceDate2016-12-03-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSan Francisco, CA-
dc.citation.title2016 IEEE International Electron Devices Meeting (2016 IEDM)-
dc.contributor.affiliatedAuthorSong, Jeonghwan-
dc.contributor.affiliatedAuthorPark, Jaehyuk-
dc.contributor.affiliatedAuthorMoon, Kibong-
dc.contributor.affiliatedAuthorWoo, Jiyong-
dc.contributor.affiliatedAuthorLim, Seokjae-
dc.contributor.affiliatedAuthorYoo, Jongmyung-
dc.contributor.affiliatedAuthorLee, Dongwook-
dc.contributor.affiliatedAuthorHwang, Hyunsang-
dc.description.journalClass1-
dc.description.journalClass1-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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