Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors

Abstract

AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (I-on/I-off) of >10(8) with a low drain voltage (0.5 V) even after the 400 degrees C annealing process.