Full metadata record
DC Field | Value | Language |
dc.contributor.author | 황현상 | - |
dc.date.accessioned | 2018-05-24T02:37:17Z | - |
dc.date.available | 2018-05-24T02:37:17Z | - |
dc.date.created | 2017-02-27 | - |
dc.date.issued | 2016-12-07 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/48118 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | 2016 IEEE International Electron Devices Meeting (2016 IEDM) | - |
dc.relation.isPartOf | 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (2016 IEDM) | - |
dc.title | Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 2016 IEEE International Electron Devices Meeting (2016 IEDM) | - |
dc.citation.conferencePlace | US | - |
dc.citation.title | 2016 IEEE International Electron Devices Meeting (2016 IEDM) | - |
dc.contributor.affiliatedAuthor | 황현상 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
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