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Thesis
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dc.contributor.author김병규en_US
dc.date.accessioned2015-02-24T14:39:16Z-
dc.date.available2015-02-24T14:39:16Z-
dc.date.issued1999en_US
dc.identifier.otherOAK-2015-02495en_US
dc.identifier.urihttp://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001899648en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/4875-
dc.descriptionMasteren_US
dc.languagekoren_US
dc.publisher포항공과대학교en_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.title0.2-0.25μm T형 게이트 P-HEMT를 이용한 X 밴드 3단 저잡증증폭기 설계en_US
dc.title.alternativeDesign of X-Band 3-Stage low Noise Amplifier using 0.2-0.25μm T-shaped Gate P-HEMTsen_US
dc.typeThesisen_US
dc.contributor.college일반대학원 전자전기공학과en_US
dc.date.degree1999-02en_US
dc.type.docTypeThesis-

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