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The Temperature Dependence of Threshold Voltage Variations due to Oblique Sing Grain Boundary in 3D NAND unit Cells

Title
The Temperature Dependence of Threshold Voltage Variations due to Oblique Sing Grain Boundary in 3D NAND unit Cells
Authors
백창기
Date Issued
2014-10-27
Publisher
NVMTS
URI
https://oasis.postech.ac.kr/handle/2014.oak/49243
Article Type
Conference
Citation
2014 Non-Volatile Memory Technology Symposium, 2014-10-27
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백창기BAEK, CHANG KI
Dept. Convergence IT Engineering
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