Conference
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Improved Endurance of RRAM by Optimizing Reset Bias Scheme in 1T1R Configuration to Suppress Reset Breakdown
- Title
- Improved Endurance of RRAM by Optimizing Reset Bias Scheme in 1T1R Configuration to Suppress Reset Breakdown
- Authors
- 황현상
- Date Issued
- 2016-06-12
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Article Type
- Conference
- Citation
- IEEE SILICON NANOELECTRONICS WORKSHOP 2016 (SNW2016), 2016-06-12
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg