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dc.contributor.author류순민-
dc.date.accessioned2018-05-24T11:45:57Z-
dc.date.available2018-05-24T11:45:57Z-
dc.date.created2017-03-05-
dc.date.issued2016-07-14-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49867-
dc.publisherKorea Nano Technology Research Society-
dc.relation.isPartOfNano Korea 2016-
dc.titleChemical Origin of Thermally Enhanced Hole Doping in Graphene on Silica Substrates-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationNano Korea 2016-
dc.citation.conferencePlaceKO-
dc.citation.titleNano Korea 2016-
dc.contributor.affiliatedAuthor류순민-
dc.description.journalClass1-
dc.description.journalClass1-

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류순민RYU, SUNMIN
Dept of Chemistry
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