DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Ji Eun | - |
dc.contributor.author | Yoo, Jinkyoung | - |
dc.contributor.author | LEE, DONGHWA | - |
dc.contributor.author | Fukui, Takashi | - |
dc.contributor.author | Hong, Young Joon | - |
dc.contributor.author | Fukui, Takashi | - |
dc.date.accessioned | 2018-06-07T01:01:23Z | - |
dc.date.available | 2018-06-07T01:01:23Z | - |
dc.date.created | 2018-04-18 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/50103 | - |
dc.description.abstract | This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.subject | III-V NANOWIRES | - |
dc.subject | SEMICONDUCTOR NANOWIRES | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | LAYER GRAPHENE | - |
dc.subject | GAAS NANOWIRES | - |
dc.subject | ZINC-BLENDE | - |
dc.subject | SUPERLATTICES | - |
dc.subject | POLYTYPISM | - |
dc.title | Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.5017251 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.112, no.14, pp.142101 | - |
dc.identifier.wosid | 000429344100010 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 142101 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 112 | - |
dc.contributor.affiliatedAuthor | LEE, DONGHWA | - |
dc.identifier.scopusid | 2-s2.0-85044918681 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | ARTICLE | - |
dc.subject.keywordPlus | III-V NANOWIRES | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | GAAS NANOWIRES | - |
dc.subject.keywordPlus | ZINC-BLENDE | - |
dc.subject.keywordPlus | SUPERLATTICES | - |
dc.subject.keywordPlus | POLYTYPISM | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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