A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials
SCIE
SCOPUS
- Title
- A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials
- Authors
- Hwang, Bohee; Lee, Jang-Sik
- Date Issued
- 2017-08
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH3NH3PbI3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time > 10(5)s. Moreover, the use of sequential vapor deposition is extended to deposit CH3NH3PbI3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.
- Keywords
- RESISTIVE SWITCHING BEHAVIOR; RANDOM-ACCESS MEMORY; SOLAR-CELLS; VACUUM DEPOSITION; LEAD IODIDE; EFFICIENT; PERFORMANCE; FILMS; INTEGRATION; SELECTIVITY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50416
- DOI
- 10.1002/adma.201701048
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 29, no. 29, 2017-08
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