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A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si SCIE SCOPUS

Title
A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si
Authors
Shin, KumjaeLee, HoontaekSung, MinLee, Sang HoonShi, HyunjungMoon, Wonkyu
Date Issued
2017-10
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
We have examined the capabilities of a Tip-On-Gate of Field-Effect Transistor (ToGoFET) probe for characterization of FIB-induced damage in Si surface. A ToGoFET probe is the SPM probe which the Field Effect Transistor (FET) is embedded at the end of a cantilever and a Pt tip was mounted at the gate of FET. The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip. In this study, a Si specimen whose surface was processed with Ga + ion beam was prepared. Irradiation and implantation with Ga + ions induce highly localized modifications to the contact potential. The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface. Experimentally, it was shown that significant differences of electric field due to the contact potential barrier in differently processed specimens were observed using ToGOFET probe. This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity.
Keywords
BEAM IMPLANTATION; MICROSCOPY; CANTILEVER; TIP
URI
https://oasis.postech.ac.kr/handle/2014.oak/50562
DOI
10.1016/j.micron.2017.07.011
ISSN
0968-4328
Article Type
Article
Citation
MICRON, vol. 101, page. 197 - 205, 2017-10
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문원규MOON, WON KYU
Dept of Mechanical Enginrg
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