Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM

Abstract

The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage V-GS(eff) is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio. (C) 2017 The Electrochemical Society. All rights reserved.