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Cited 4 time in webofscience Cited 5 time in scopus
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dc.contributor.authorSEOKJAE, LIM-
dc.contributor.authorWoo, J.-
dc.contributor.authorHwang, H.-
dc.date.accessioned2018-06-15T05:35:37Z-
dc.date.available2018-06-15T05:35:37Z-
dc.date.created2017-12-21-
dc.date.issued2017-08-
dc.identifier.issn2162-8769-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/50635-
dc.description.abstractBipolar-threshold switching was demonstrated using volatile-atomic switches (VAS) for cross-point selector applications. The VAS (Cu/Cu2S/W) exhibits asymmetric current?voltage (I?V) characteristics. An abrupt conductance change occurs by the formation of a Cu filament when a positive voltage is applied to the Cu electrode. Meanwhile, nonlinear I?V characteristics are observed because of the high concentration of vacancy of Cu under a negative voltage. We thus introduce the complementary-VAS configuration for the self-compliance characteristics at both polarities. Furthermore, the increased the switching voltage at a fast sweeping rate allows the VAS to show a strong immunity to electrical disturbance. ? 2017 The Electrochemical Society. All rights reserved.-
dc.languageEnglish-
dc.publisherElectrochemical Society Inc.-
dc.relation.isPartOfECS Journal of Solid State Science and Technology-
dc.subjectAsymmetric currents-
dc.subjectAtomic switches-
dc.subjectElectrical disturbances-
dc.subjectNegative voltage-
dc.subjectPositive voltage-
dc.subjectStrong immunity-
dc.subjectSwitching voltages-
dc.subjectThreshold switching-
dc.titleExcellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device-
dc.typeArticle-
dc.identifier.doi10.1149/2.0081709jss-
dc.type.rimsART-
dc.identifier.bibliographicCitationECS Journal of Solid State Science and Technology, v.6, no.9, pp.P586 - P588-
dc.identifier.wosid000418363500014-
dc.date.tcdate2019-02-01-
dc.citation.endPageP588-
dc.citation.number9-
dc.citation.startPageP586-
dc.citation.titleECS Journal of Solid State Science and Technology-
dc.citation.volume6-
dc.contributor.affiliatedAuthorSEOKJAE, LIM-
dc.contributor.affiliatedAuthorHwang, H.-
dc.identifier.scopusid2-s2.0-85033797580-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.type.docTypeArticle-
dc.subject.keywordPlusMEMORIES-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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