DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Hyun Ho | - |
dc.contributor.author | Najafov, Hikmet | - |
dc.contributor.author | Kharlamov, Nikolai | - |
dc.contributor.author | Kaznetsov, Denis V. | - |
dc.contributor.author | Didenko, Sergei I. | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Briseno, Alejandro L. | - |
dc.contributor.author | Podzorov, Vitaly | - |
dc.date.accessioned | 2018-06-15T05:46:25Z | - |
dc.date.available | 2018-06-15T05:46:25Z | - |
dc.date.created | 2017-12-04 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/50829 | - |
dc.description.abstract | Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operating in the dark. Here, we report an observation of a'polarization-dependent photoinduced bias-stress effect in two" prototypical single-crystal OFETs, based on rubrene and tetraphenylbis(indolo{l,2-alpha})quinolin. We find that the decay rate of the source-drain current in these OFETs under, illumination is a periodic function of the polarization angle of incident photoexcitation with respect to the crystal axes, with a periodicity of n. The angular positions of maxima and minima of the bias-stress rate match those of the optical absorption coefficient of the corresponding crystals. The analysis of the effect shows that it stems from a charge transfer of "hot" holes, photogenerated in the crystal within a very short thermafization length (MLT mu m) from the semiconductor-dielectric interface. The observed phenomenon is a type of intrinsic structure-property relationship, revealing how molecular packing affects parameter drift in organic transistors under illumination. We also demonstrate that a photoinduced charge transfer in OFETs can be used for recording rewritable accumulation channels with an optically defined geometry and resolution, which can be used in a number of potential applications. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | THRESHOLD VOLTAGE SHIFTS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | INTERFACES | - |
dc.subject | MEMORY | - |
dc.title | Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.7b11134 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.39, pp.34153 - 34161 | - |
dc.identifier.wosid | 000412717600091 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 34161 | - |
dc.citation.number | 39 | - |
dc.citation.startPage | 34153 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Cho, Kilwon | - |
dc.identifier.scopusid | 2-s2.0-85032588692 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE SHIFTS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | organic semiconductor | - |
dc.subject.keywordAuthor | rubrene | - |
dc.subject.keywordAuthor | molecular crystal | - |
dc.subject.keywordAuthor | organic transistor | - |
dc.subject.keywordAuthor | bias-stress effect | - |
dc.subject.keywordAuthor | photoinduced charge transfer | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | mobility | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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