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Structural and Optical Properties of Single-and Few-Layer Magnetic Semiconductor CrPS4 SCIE SCOPUS

Title
Structural and Optical Properties of Single-and Few-Layer Magnetic Semiconductor CrPS4
Authors
Lee, JinhwanKo, Taeg YeoungKim, Jung HwaBark, HunyoungKang, ByunggilJung, Soon-GilPark, TusonLee, ZonghoonRyu, SunminLee, Changgu
Date Issued
2017-11
Publisher
AMER CHEMICAL SOC
Abstract
Atomically thin binary two-dimensional (2D) semi-conductors exhibit diverse physical properties depending on their composition, structure, and thickness. By adding another element in these materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffraction. Transmission electron microscopy showed that preferentially cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy and exhibited significant dependence on thickness of crystals exfoliated down to a single layer. Optical absorption determined by reflectance contrast was dominated by d-d-type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness dependence and hinted at a high photochemical activity for single-layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this kind of atomically thin magnetic semiconductors.
Keywords
BLACK PHOSPHORUS; CHROMIUM PHOTOLUMINESCENCE; TEMPERATURE-DEPENDENCE; ELASTIC PROPERTIES; GRAPHENE; MONOLAYER; ELECTRON; MOS2; TRANSITION; ANISOTROPY
URI
https://oasis.postech.ac.kr/handle/2014.oak/50971
DOI
10.1021/acsnano.7b04679
ISSN
1936-0851
Article Type
Article
Citation
ACS Nano, vol. 11, no. 11, page. 10935 - 10944, 2017-11
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류순민RYU, SUNMIN
Dept of Chemistry
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