DC Field | Value | Language |
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dc.contributor.author | Cho, Hyeonsu | - |
dc.contributor.author | Kim, Kihyun | - |
dc.contributor.author | Yoon, Jun-Sik | - |
dc.contributor.author | Rim, Taiuk | - |
dc.contributor.author | Meyyappan, M. | - |
dc.contributor.author | Baek, Chang-Ki | - |
dc.date.accessioned | 2018-06-15T05:56:26Z | - |
dc.date.available | 2018-06-15T05:56:26Z | - |
dc.date.created | 2017-12-21 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1530-437X | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/51005 | - |
dc.description.abstract | Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (VTH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the sub-threshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (In.RMS) near VTH; otherwise, a reduction of In.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance. ? 2001-2012 IEEE. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Sensors Journal | - |
dc.title | Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JSEN.2017.2674672 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Sensors Journal, v.17, no.9, pp.2792 - 2796 | - |
dc.identifier.wosid | 000399767900026 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 2796 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 2792 | - |
dc.citation.title | IEEE Sensors Journal | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Cho, Hyeonsu | - |
dc.contributor.affiliatedAuthor | Baek, Chang-Ki | - |
dc.identifier.scopusid | 2-s2.0-85018983076 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BIOSENSOR | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | UREA | - |
dc.subject.keywordPlus | PH | - |
dc.subject.keywordAuthor | Ion-sensitive field effect transistor | - |
dc.subject.keywordAuthor | channel doping | - |
dc.subject.keywordAuthor | honeycomb structure | - |
dc.subject.keywordAuthor | low frequency noise | - |
dc.subject.keywordAuthor | pH sensor | - |
dc.subject.keywordAuthor | depletion-mode | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
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