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A 256Mb SDRAM with effectively precharged negative word-line scheme

Title
A 256Mb SDRAM with effectively precharged negative word-line scheme
Authors
심재윤
Date Issued
2003-07-09
Publisher
대한 전자공학회
URI
https://oasis.postech.ac.kr/handle/2014.oak/56801
Article Type
Conference
Citation
한국 반도체 학술 대회, page. 271 - 272, 2003-07-09
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심재윤SIM, JAE YOON
Dept of Electrical Enginrg
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