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Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET
- Title
- Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET
- Authors
- 정윤하
- Date Issued
- 2009-12-07
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE International Electron Devices Meeting 2009 (IEDM 2009), page. 6.3.1 - 6.3.4, 2009-12-07
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg