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The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack
- Title
- The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack
- Date Issued
- 2011-09-28
- Publisher
- THE JAPAN SOCIETY OF APPLIED PHYSICS
- Article Type
- Conference
- Citation
- SSDM(International Conference on Solid State Devices and Materials), 2011-09-28
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg