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Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS
- Title
- Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS
- Authors
- 정윤하
- Date Issued
- 2009-08-24
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- 2009 IEEE International Symposium on Advanced Gate Stack Technology, 2009-08-24
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg