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Indium composition fluctuation in InGaN well layer of LED devices analyzed by APT and STEM-EELS
- Title
- Indium composition fluctuation in InGaN well layer of LED devices analyzed by APT and STEM-EELS
- Date Issued
- 2011-05-22
- Publisher
- Congress of the International Union of Microbeam Analysis Societies
- Article Type
- Conference
- Citation
- 5th Congress of the International Union of Microbeam Analysis Societies(IUMAS-V), 2011-05-22
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg