Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
- Title
- Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
- Authors
- 정윤하
- Date Issued
- 2011-09-29
- Publisher
- The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/61504
- Article Type
- Conference
- Citation
- 2011 International Conference on Solid State and Device Materials, 2011-09-29
- Files in This Item:
- There are no files associated with this item.
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