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Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk
- Title
- Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk
- Authors
- 정윤하
- Date Issued
- 2011-08-16
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- International Conference on Nanotechnology, 2011-08-16
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg