Low-Frequency Noise Behavior of La-Doped HfSiON/Metal Gate nMOSFETs
- Title
- Low-Frequency Noise Behavior of La-Doped HfSiON/Metal Gate nMOSFETs
- Authors
- 정윤하
- Date Issued
- 2011-04-14
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/61509
- Article Type
- Conference
- Citation
- International Reliability Physics Symposium, 2011-04-14
- Files in This Item:
- There are no files associated with this item.
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