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An Equivalent Circuit Model for High-k/Metal Gate Stack MOS Capacitor with Dynamic Leakage
- Title
- An Equivalent Circuit Model for High-k/Metal Gate Stack MOS Capacitor with Dynamic Leakage
- Authors
- 정윤하
- Date Issued
- 2010-10-15
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- Nanotechnology Materials and Devices Conference, 2010-10-15
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg