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dc.contributor.author황현상-
dc.date.accessioned2018-06-18T06:44:55Z-
dc.date.available2018-06-18T06:44:55Z-
dc.date.created2013-03-10-
dc.date.issued2012-10-09-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/63337-
dc.publisherStanford NMTRI (Nonvolatile Memory Technology Research Initiative)-
dc.relation.isPartOf2ND INTERNATIONAL WORKSHOP ON RESISTIVE RAM-
dc.titleSelector Devices for Cross-point ReRAM-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2ND INTERNATIONAL WORKSHOP ON RESISTIVE RAM-
dc.citation.conferenceDate2012-10-08-
dc.citation.conferencePlaceUS-
dc.citation.title2ND INTERNATIONAL WORKSHOP ON RESISTIVE RAM-
dc.contributor.affiliatedAuthor황현상-
dc.description.journalClass1-
dc.description.journalClass1-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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