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dc.contributor.author임근배-
dc.contributor.authorM. Nishizawa-
dc.contributor.authorH. Niitsuma-
dc.contributor.authorM. Esashi-
dc.date.accessioned2018-06-18T07:30:12Z-
dc.date.available2018-06-18T07:30:12Z-
dc.date.created2013-03-26-
dc.date.issued1998-06-15-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/63690-
dc.publisherSociety of Exploration Geophysicists of Japan-
dc.relation.isPartOfProceeding of the 98th SEGJ (Society of Exploration Geophysicists of Japan) Conference-
dc.relation.isPartOfPROCEEDING OF THE 98TH SEGJ (SOCIETY OF EXPLORATION GEOPHYSICISTS OF JAPAN)-
dc.titleCharacteristics of Silicon Capacitive Accelerometer Developed by Micromachining Technique-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationProceeding of the 98th SEGJ (Society of Exploration Geophysicists of Japan) Conference-
dc.citation.conferencePlaceJA-
dc.citation.titleProceeding of the 98th SEGJ (Society of Exploration Geophysicists of Japan) Conference-
dc.contributor.affiliatedAuthor임근배-
dc.description.journalClass1-
dc.description.journalClass1-

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임근배LIM, GEUN BAE
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