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dc.contributor.authorJinBo-
dc.contributor.author김정식-
dc.contributor.author강대건-
dc.contributor.authorMeyyappanMeyya-
dc.contributor.author이정수-
dc.date.accessioned2018-06-18T08:07:25Z-
dc.date.available2018-06-18T08:07:25Z-
dc.date.created2013-06-20-
dc.date.issued2013-08-06-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/64329-
dc.publisherIEEE-
dc.relation.isPartOfThe 13th IEEE International Conference on Nanotechnology-
dc.titleSize-dependent Characteristics of Highly-scalable In2Se3 Nanowire Phase-change Random Access Memory-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 13th IEEE International Conference on Nanotechnology-
dc.citation.titleThe 13th IEEE International Conference on Nanotechnology-
dc.contributor.affiliatedAuthorJinBo-
dc.contributor.affiliatedAuthor김정식-
dc.contributor.affiliatedAuthor강대건-
dc.contributor.affiliatedAuthorMeyyappanMeyya-
dc.contributor.affiliatedAuthor이정수-
dc.description.journalClass1-
dc.description.journalClass1-

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이정수LEE, JEONG SOO
Dept of Electrical Enginrg
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