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Thesis
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dc.contributor.author이청en_US
dc.date.accessioned2015-02-24T15:24:01Z-
dc.date.available2015-02-24T15:24:01Z-
dc.date.issued2002en_US
dc.identifier.otherOAK-2015-04052en_US
dc.identifier.urihttp://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001906212en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/6432-
dc.descriptionDoctoren_US
dc.languagekoren_US
dc.publisher포항공과대학교en_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.title폴리실리콘 박막 트랜지스터용 저온 게이트 산화막과 SiO2Si 계면 특성 개선에 대한 연구en_US
dc.title.alternative(A) Study on the Improvement of Low Temperature Gate Oxide and SiO2/Si Interface Property for Poly-Silicon Thin Film Transistoren_US
dc.typeThesisen_US
dc.contributor.college일반대학원 화학공학과en_US
dc.date.degree2002-02en_US
dc.type.docTypeThesis-

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