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Nanoscale (~10nm) 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode
- Title
- Nanoscale (~10nm) 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode
- Authors
- 황현상
- Date Issued
- 2013-12-10
- Publisher
- IEEE Electron Devices Society
- Article Type
- Conference
- Citation
- 2013 IEEE International Electron Devices Meeting(IEDM), 2013-12-10
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