Contact-Resistance Scaling Characteristics of Phase Change Memory in GeTe and Ge2Sb2Te5 Nanowires
- Title
- Contact-Resistance Scaling Characteristics of Phase Change Memory in GeTe and Ge2Sb2Te5 Nanowires
- Authors
- 조문호
- Date Issued
- 2012-11-26
- Publisher
- materials research society
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/66865
- Article Type
- Conference
- Citation
- 2012 Fall Materials Research Society (MRS) Meeting, 2012-11-26
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.