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dc.contributor.author박찬경-
dc.contributor.author장동현-
dc.contributor.author정우영-
dc.date.accessioned2018-06-18T11:12:12Z-
dc.date.available2018-06-18T11:12:12Z-
dc.date.created2014-04-08-
dc.date.issued2013-05-27-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/67032-
dc.publisherE-MRS spring-
dc.relation.isPartOfE-MRS spring-
dc.titleInfluences of InGaN Layer on the Ohmic Contact Property-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationE-MRS spring-
dc.citation.titleE-MRS spring-
dc.contributor.affiliatedAuthor박찬경-
dc.contributor.affiliatedAuthor장동현-
dc.contributor.affiliatedAuthor정우영-
dc.description.journalClass1-
dc.description.journalClass1-

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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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