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3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-SiTransistor
- Title
- 3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-SiTransistor
- Authors
- 백창기
- Date Issued
- 2014-02-25
- Publisher
- 한국반도체학술대회
- Article Type
- Conference
- Citation
- 제21회 한국반도체학술대회, 2014-02-25
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