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Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer
- Title
- Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer
- Authors
- 백창기
- Date Issued
- 2011-09-29
- Publisher
- SSDM
- Article Type
- Conference
- Citation
- 2011 International Conference on Solid State and Device Materials, 2011-09-29
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