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dc.contributor.author백창기-
dc.date.accessioned2018-06-19T00:06:02Z-
dc.date.available2018-06-19T00:06:02Z-
dc.date.created2015-02-19-
dc.date.issued2011-08-17-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/68461-
dc.publisherIEEE Nanotechnology Council-
dc.relation.isPartOf2011 11th IEEE International Conference on Nanotechnology-
dc.titleAnalysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2011 11th IEEE International Conference on Nanotechnology-
dc.citation.conferencePlaceUS-
dc.citation.title2011 11th IEEE International Conference on Nanotechnology-
dc.contributor.affiliatedAuthor백창기-
dc.description.journalClass1-
dc.description.journalClass1-

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백창기BAEK, CHANG KI
Dept. Convergence IT Engineering
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