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The Effect of Nitrogen doped GST Buffer Layer on Switching Characteristics of Conductive-Bridging RAM
- Title
- The Effect of Nitrogen doped GST Buffer Layer on Switching Characteristics of Conductive-Bridging RAM
- Authors
- 황현상
- Date Issued
- 2014-10-28
- Publisher
- 한국반도체연구조합
- Article Type
- Conference
- Citation
- 2014 14th Non-Volatile Memory Technology Symposium (NVMTS 2014), 2014-10-28
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg